inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor 2SC4901 description high gain bandwidth product f t = 9 ghz typ. high gain, low noise figure pg = 13.0 db typ., nf = 1.2 db typ. @ f = 900 mhz applications designed for vhf, uhf wide band amplifier. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 15 v v ceo collector-emitter voltage 9 v v ebo emitter-base voltage 1.5 v i c collector current-continuous 50 ma p c collector power dissipation @t c =25 0.1 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor 2SC4901 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 10 a ; i e = 0 15 v i cbo collector cutoff current v cb = 12v; i e = 0 10 a i ceo collector cutoff current v ce = 9v; r be = 1.0 ma i ebo emitter cutoff current v eb = 1.5v; i c = 0 10 a h fe dc current gain i c = 20ma ; v ce = 5v 50 250 f t current-gain?bandwidth product i c = 20ma ; v ce = 5v 6.0 9.0 ghz c ob output capacitance i e = 0 ; v cb = 5v; f= 1mhz 0.9 1.4 pf pg power gain i c = 20ma ; v ce = 5v; f= 900mhz 10 13 db nf noise figure i c = 5ma ; v ce = 5v; f= 900mhz 1.2 2.5 db
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC4901
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor 2SC4901
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC4901 s-parameter v ce = 5 v, i c = 5 ma , z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 200 0.672 ?69.4 10.99 134. 0 0.0610 58.8 0.752 ?26.7 400 0.533 ?109.9 7.32 111. 5 0.0841 49.9 0.528 ?50.5 600 0.469 ?134.7 5.28 98. 8 0.0989 49.3 0.412 ?56.0 800 0.446 ?152.3 4.12 90. 2 0.112 50.9 0.351 ?59.0 1000 0.432 ?165.9 3.37 83. 2 0.126 53.5 0.316 ?61.0 1200 0.427 ?176.2 2.88 77. 2 0.141 55.5 0.294 ?63.3 1400 0.430 174.1 2.52 72. 1 0.157 57.4 0.282 ?66.0 1600 0.433 166.5 2.26 67. 5 0.174 58.6 0.274 ?69.1 1800 0.439 158.0 2.04 63. 3 0.191 59.2 0.269 ?72.0 2000 0.453 151.9 1.88 59. 2 0.209 60.0 0.265 ?76.0 v ce = 5 v, i c = 20 ma , z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 200 0.421 ?115.2 17.40 114. 7 0.0399 50.6 0.474 ?57.7 400 0.377 ?150.2 9.74 98. 5 0.0609 64.2 0.284 ?67.2 600 0.370 ?167.0 6.68 90. 1 0.0822 67.8 0.213 ?70.5 800 0.373 ?179.1 5.09 84. 0 0.105 68.6 0.180 ?72.9 1000 0.371 170.6 4.13 79. 0 0.128 69.2 0.161 ?74.9 1200 0.377 164.9 3.49 74. 3 0.151 68.9 0.151 ?77.6 1400 0.384 156.9 3.04 70. 3 0.174 68.3 0.146 ?80.7 1600 0.388 150.7 2.71 66. 8 0.197 67.3 0.143 ?83.5 1800 0.392 145.3 2.45 63. 3 0.219 66.2 0.142 ?87.2 2000 0.406 139.0 2.25 59. 5 0.241 64.9 0.141 ?91.0
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